Preparation of transparent, electrically conducting ZnO film from zinc acetate and alkoxide
Identifieur interne : 000164 ( Main/Exploration ); précédent : 000163; suivant : 000165Preparation of transparent, electrically conducting ZnO film from zinc acetate and alkoxide
Auteurs : RBID : ISTEX:10853_1994_Article_BF00355977.pdfAbstract
Very uniform and transparent zinc oxide thin films doped with aluminium and indium were fabricated by the dip-coating technique using solutions prepared by the ethanolamine method. As starting materials, zinc acetate and zinc n-propoxide were used. Zinc acetate and propoxide are soluble in PriOH in the presence of diethanolamine, although they are hardly soluble without the amine. The prepared solutions were very stable and suitable for dip-coating. Zinc oxide was crystallized by heating above 500 °C, and doping of aluminium and indium retarded the crystallization. The electrical resistivity of the film was decreased by doping with aluminium and indium. The lowest resistivity of 2 × 10−2 Ωcm was obtained by post-coating treatment in a nitrogen atmosphere.
DOI: 10.1007/BF00355977
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Takahashi</name><affiliation wicri:level="1"><mods:affiliation>Faculty of Engineering, Gifu University, Yanagido 1-1, 501-11, Gifu, Japan</mods:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Faculty of Engineering, Gifu University, Yanagido 1-1, 501-11, Gifu</wicri:regionArea><wicri:noRegion>Gifu</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10853_1994_Article_BF00355977.pdf</idno><date when="1994">1994</date><idno type="doi">10.1007/BF00355977</idno><idno type="wicri:Area/Main/Corpus">000585</idno><idno type="wicri:Area/Main/Curation">000585</idno><idno type="wicri:Area/Main/Exploration">000164</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Very uniform and transparent zinc oxide thin films doped with aluminium and indium were fabricated by the dip-coating technique using solutions prepared by the ethanolamine method. As starting materials, zinc acetate and zinc n-propoxide were used. Zinc acetate and propoxide are soluble in PriOH in the presence of diethanolamine, although they are hardly soluble without the amine. The prepared solutions were very stable and suitable for dip-coating. Zinc oxide was crystallized by heating above 500 °C, and doping of aluminium and indium retarded the crystallization. The electrical resistivity of the film was decreased by doping with aluminium and indium. The lowest resistivity of 2 × 10−2 Ωcm was obtained by post-coating treatment in a nitrogen atmosphere.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="66c6e54f4c23b3e2791fbe2a46cb316ddc679e2b"><titleInfo lang="eng"><title>Preparation of transparent, electrically conducting ZnO film from zinc acetate and alkoxide</title></titleInfo><name type="personal"><namePart type="given">Y.</namePart><namePart type="family">Ohya</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Faculty of Engineering, Gifu University, Yanagido 1-1, 501-11, Gifu, Japan</affiliation></name><name type="personal"><namePart type="given">H.</namePart><namePart type="family">Saiki</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Faculty of Engineering, Gifu University, Yanagido 1-1, 501-11, Gifu, Japan</affiliation></name><name type="personal"><namePart type="given">Y.</namePart><namePart type="family">Takahashi</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Faculty of Engineering, Gifu University, Yanagido 1-1, 501-11, Gifu, Japan</affiliation></name><typeOfResource>text</typeOfResource><genre>Papers</genre><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers, Dordrecht</publisher><dateCreated encoding="w3cdtf">1992-10-01</dateCreated><dateCaptured encoding="w3cdtf">1994-02-16</dateCaptured><dateValid encoding="w3cdtf">2004-09-04</dateValid><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Very uniform and transparent zinc oxide thin films doped with aluminium and indium were fabricated by the dip-coating technique using solutions prepared by the ethanolamine method. As starting materials, zinc acetate and zinc n-propoxide were used. Zinc acetate and propoxide are soluble in PriOH in the presence of diethanolamine, although they are hardly soluble without the amine. The prepared solutions were very stable and suitable for dip-coating. Zinc oxide was crystallized by heating above 500 °C, and doping of aluminium and indium retarded the crystallization. The electrical resistivity of the film was decreased by doping with aluminium and indium. The lowest resistivity of 2 × 10−2 Ωcm was obtained by post-coating treatment in a nitrogen atmosphere.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>JOURNAL OF MATERIALS SCIENCE</title></titleInfo><titleInfo><title>Journal of Materials Science</title><partNumber>Year: 1994</partNumber><partNumber>Volume: 29</partNumber><partNumber>Number: 15</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1994-01-01</dateIssued><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><subject usage="primary"><topic>Engineering</topic><topic>Polymer Sciences</topic><topic>Industrial Chemistry/Chemical Engineering</topic><topic>Mechanics</topic><topic>Materials Processing, Characterization, and Design</topic></subject><identifier type="issn">0022-2461</identifier><identifier type="issn">Electronic: 1573-4803</identifier><identifier type="matrixNumber">10853</identifier><identifier type="local">IssueArticleCount: 37</identifier><recordInfo><recordOrigin>Chapman & Hall, 1994</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00355977</identifier><identifier type="matrixNumber">Art32</identifier><identifier type="local">BF00355977</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>4099</start><end>4103</end></extent></part><recordInfo><recordOrigin>Chapman & Hall, 1994</recordOrigin><recordIdentifier>10853_1994_Article_BF00355977.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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